Polysilicon multiplexer for two-dimensional image sensor arrays
US5536932A · kind A · utility
20Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 10, 1995 |
| Grant date | Jul 16, 1996 |
| Priority date | — |
| Expiry date | Feb 10, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
A polysilicon multiplexer for two-dimensional image sensor arrays is provided. Multiplexing the gate and data lines of a two-dimensional image sensor array greatly simplifies the packaging required for large devices with high resolution. The multiplex transistors are polysilicon for required read out speed. The multiplexer structure of polysilicon TFTs and sensor arrays of amorphous silicon TFTs are formed on a single substrate wherein the polysilicon TFTs are formed by laser crystallization on an outer periphery of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.