Method and apparatus for the deposition of parylene AF4 onto semiconductor wafers
US5538758A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 1995 |
| Grant date | Jul 23, 1996 |
| Priority date | — |
| Expiry date | Oct 27, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08G2261/3424
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Chemical vapor deposition apparatus is provided for the quick and efficient deposition of Parylene AF4 onto silicon wafers in the production of semiconductor chips. A method of depositing parylene AF4 onto the surface of a semiconductor wafer includes cooling the semiconductor chip wafer to a temperature below 0.degree. C., creating an inert atmosphere around the apparatus, creating sub-atmospheric pressure conditions around the wafer while maintaining the inert external atmosphere, and depositing a predetermined thickness of the parylene AF4 polymer onto the wafer. The method further includes the steps of heating the wafer back to room temperature prior to removing the wafer from the sub-atmospheric conditions, and may still further include the steps of further heating the wafer to a predetermined annealing temperature, and the cooling the wafer back to room temperature prior to removing the wafer from the sub-atmospheric conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.