Semiconductor light emitting element with II-VI and III-V compounds
US5539239A · kind A · utility
9Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 1995 |
| Grant date | Jul 23, 1996 |
| Priority date | — |
| Expiry date | Feb 17, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0125
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light emitting element includes a wide band gap energy II-VI semiconductor layer on a p type III-V semiconductor substrate and a III-V semiconductor buffer layer between the semiconductor substrate and the wide band gap energy II-VI semiconductor layer having a band gap energy intermediate those of the semiconductor substrate and the wide band gap energy II-VI semiconductor layer. Energy spikes in the valence band of the element are reduced and the injection efficiency of holes is increased so that a semiconductor light emitting element having a low operation voltage is produced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.