Semiconductor device having an interconnection of a laminate structure and a method for manufacturing the same
US5539256A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 23, 1995 |
| Grant date | Jul 23, 1996 |
| Priority date | — |
| Expiry date | Feb 23, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metallic interconnection has a laminate structure including a Ti film, a TiN film, a Cu--Ti compound film and a Cu alloy film containing Cu and a small amount of other metallic elements, the films being consecutively formed on a SiO.sub.2 film located on a semiconductor substrate. A W film covers the surface of the laminate structure. The Cu--Ti compound film is formed by sputtering a Ti and a Cu alloy targets followed by a subsequent heat treatment or by sputtering Cu--Ti alloy target and a subsequent heat treatment. The Cu--Ti compound film increases the adhesion force between the Cu alloy film and the TiN film while the W film protects the metallic interconnection against oxidation and corrosion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.