Misted deposition apparatus for fabricating an integrated circuit
US5540772A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 1994 |
| Grant date | Jul 30, 1996 |
| Priority date | — |
| Expiry date | Oct 11, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S427/101
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus are disclosed for forming thin films of chemical compounds utilized in integrated circuits. The method includes steps of forming a precursor liquid comprising a chemical compound in a solvent, providing a substrate within a vacuum deposition chamber, producing a mist of the precursor liquid, and flowing the mist into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried to form a thin film of a solid material on the substrate, then the integrated circuit is completed to include at least a portion of the film of solid material in a component of the integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.