Anti-reflective material and patterning method
US5541037A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 1994 |
| Grant date | Jul 30, 1996 |
| Priority date | — |
| Expiry date | Dec 20, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/091
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention provides an anti-reflective material comprising a salt of a carboxyl-terminated fluorinated alkyl polyether compound with a water-soluble amino compound. A resist pattern is defined by forming anti-reflective layer of the anti-reflective material on a photoresist layer, exposing the photoresist layer to a desired pattern of light, removing the anti-reflective layer, and developing the photoresist layer. A fine resist pattern having improved dimensional and alignment accuracies can be defined in a simple, efficient, reproducible manner without substantial environmental pollution. The invention is advantageously utilized in photo-lithography using photoresists.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.