Method for manufacturing a semiconductor device using a catalyst
US5543352A · kind A · utility
276Cited by
3References
20Claims
0Family size
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Key dates
| Filing date | Nov 16, 1994 |
| Grant date | Aug 6, 1996 |
| Priority date | — |
| Expiry date | Nov 16, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/13454
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a thin film transistor having a crystalline silicon layer as an active layer comprises the steps of disposing a solution containing a catalyst for promoting a crystallization of silicon in contact with an amorphous silicon film, crystallizing the amorphous silicon at a relatively low temperature and then improving the crystallinity by irradiating the film with a laser light. The concentration of the catalyst in the crystallized silicon film can be controlled by controlling the concentration of the catalyst in the solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.