Hisashi Ohtani
434Patents
71h-index
74Co-inventors
93Inventor score
Filing activity: Jul 24, 1991 → Apr 24, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5643826A | Method for manufacturing a semiconductor device | Emerging Cross-Sectional Technologies | 1,362 | Expired |
| US5923962A | Method for manufacturing a semiconductor device | Emerging Cross-Sectional Technologies | 979 | Expired |
| US6127702A | Semiconductor device having an SOI structure and manufacturing method therefor | Electricity | 527 | Expired |
| US6274887A | Semiconductor device and manufacturing method therefor | Electricity | 507 | Expired |
| US6285042A | Active Matry Display | Emerging Cross-Sectional Technologies | 330 | Expired |
| US6335541B1 | Semiconductor thin film transistor with crystal orientation | Emerging Cross-Sectional Technologies | 285 | Expired |
| US6165824A | Method of manufacturing a semiconductor device | Electricity | 277 | Expired |
| US5543352A | Method for manufacturing a semiconductor device using a catalyst | Physics | 276 | Expired |
| US5705829A | Semiconductor device formed using a catalyst element capable of promoting crystallization | Electricity | 264 | Expired |
| US6303963A | Electro-optical device and semiconductor circuit | Electricity | 261 | Expired |
| US5612250A | Method for manufacturing a semiconductor device using a catalyst | Physics | 241 | Expired |
| US5656825A | Thin film transistor having crystalline semiconductor layer obtained by irradiation | Electricity | 233 | Expired |
| US5654203A | Method for manufacturing a thin film transistor using catalyst elements to promote crystallization | Electricity | 230 | Expired |
| US6335231B1 | Method of fabricating a high reliable SOI substrate | Emerging Cross-Sectional Technologies | 217 | Expired |
| US5585291A | Method for manufacturing a semiconductor device containing a crystallization promoting material | Emerging Cross-Sectional Technologies | 212 | Expired |
| US6365933B1 | Semiconductor device and method of manufacturing the same | Electricity | 204 | Expired |
| US6077731A | Semiconductor device and method for fabricating the same | Electricity | 176 | Expired |
| US6087679A | Semiconductor thin film and semiconductor device | Emerging Cross-Sectional Technologies | 174 | Expired |
| US6031249A | CMOS semiconductor device having boron doped channel | Electricity | 148 | Expired |
| US6512271B1 | Semiconductor device | Electricity | 143 | Expired |
| US6147667A | Semiconductor device | Physics | 141 | Expired |
| US5932893A | Semiconductor device having doped polycrystalline layer | Electricity | 138 | Expired |
| US6803264B2 | Method of fabricating a semiconductor device | Emerging Cross-Sectional Technologies | 136 | Expired |
| US6093934A | Thin film transistor having grain boundaries with segregated oxygen and halogen elements | Electricity | 135 | Expired |
| US6124604A | Liquid crystal display device provided with auxiliary circuitry for reducing electrical resistance | Physics | 135 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.