Method for forming thin and thick metal layers
US5543358A · kind A · utility
2Cited by
4References
27Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 28, 1994 |
| Grant date | Aug 6, 1996 |
| Priority date | — |
| Expiry date | Nov 28, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76838
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a first metal region of a first thickness, and a second metal region of a second thickness on a substrate, wherein the second thickness is greater than the first thickness. The method includes the steps of depositing a first metal layer of a first thickness; depositing a masking layer of a material selectively etchable with respect to the first metal layers; photoetching the masking layer along an outline defining a first metal regions; depositing a second metal layer; forming a resist layer along an outline defining a second metal region; and etching the first and second metal layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.