Semiconductor device having a two-channel MISFET arrangement defined by I-V characteristic having a negative resistance curve and SRAM cells employing the same
US5543652A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 1993 |
| Grant date | Aug 6, 1996 |
| Priority date | — |
| Expiry date | Jul 29, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/904
Abstract
Negative characteristic MISFETs, which are of the same channel conductivity type and which have different threshold voltages, are formed in a doped silicon thin film deposited over a substrate and are connected in channel-to-channel series with each other. The pair of series-connected negative characteristic MISFETs, a resistive element, an information storage capacitive element and a transfer MISFET constitute an SRAM memory cell. Equivalently, a negative characteristic MISFET having a current-voltage characteristic defined by a negative resistance curve can be used in lieu of the pair of series-connected negative characteristic MISFETs in the formation of the individual memory cells of the SRAM. The negative resistance curve of the negative characteristic MISFET is shaped such that the linear current-voltage characteristic curve corresponding to the resistive element of the memory cell intersects the negative resistance curve at at least three location points. The negative characteristic MISFET, like the pair of series-connected negative characteristic MISFETs, has an active region formed in a doped thin film silicon (polycrystalline silicon) layer insulatedly above a substrate m…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.