Crystallization from high temperature solutions of Si in Cu/Al solvent
US5544616A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 1994 |
| Grant date | Aug 13, 1996 |
| Priority date | — |
| Expiry date | May 27, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02628
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 3.times.10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about 850.degree. to about 1100.degree. C. in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.