Tihu Wang
7Patents
4h-index
5Co-inventors
46Inventor score
Filing activity: May 27, 1994 → Nov 9, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6281098A | Process for Polycrystalline film silicon growth | Electricity | 506 | Expired |
| US5544616A | Crystallization from high temperature solutions of Si in Cu/Al solvent | Electricity | 15 | Expired |
| US6468886B2 | Purification and deposition of silicon by an iodide disproportionation reaction | Electricity | 6 | Expired |
| US6984263B2 | Shallow melt apparatus for semicontinuous czochralski crystal growth | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6712908B2 | Purified silicon production system | Electricity | 4 | Expired |
| US7629236B2 | Method for passivating crystal silicon surfaces | Emerging Cross-Sectional Technologies | 2 | Expired |
| US8642450B2 | Low temperature junction growth using hot-wire chemical vapor deposition | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.