Plug strap process utilizing selective nitride and oxide etches
US5545581A · kind A · utility
51Cited by
15References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 6, 1994 |
| Grant date | Aug 13, 1996 |
| Priority date | — |
| Expiry date | Dec 6, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76895
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a method for electrically connecting a trench capacitor and a diffusion region, and also for electrically connecting a trench capacitor or a diffusion region with external circuitry in a semiconductor device. The method provides for formation of a strap or bridge contact by formation of strap holes exposing the electrical elements utilizing an oxide insulation layer and a nitride etch stop and a highly selective oxide:nitride etch and a selective nitride:oxide etch. The strap holes may then be filled with an electrical conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.