Jerome B. Lasky
32Patents
13h-index
45Co-inventors
81Inventor score
Filing activity: Apr 30, 1987 → Jul 18, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6483156B1 | Double planar gated SOI MOSFET structure | Electricity | 139 | Expired |
| US6689650B2 | Fin field effect transistor with self-aligned gate | Electricity | 128 | Expired |
| US6635970B2 | Power distribution design method for stacked flip-chip packages | Electricity | 51 | Expired |
| US5545581A | Plug strap process utilizing selective nitride and oxide etches | Electricity | 51 | Expired |
| US5913125A | Method of controlling stress in a film | Performing Operations; Transporting | 49 | Expired |
| US6038168A | Hot-electron programmable latch for integrated circuit fuse applications and method of programming therefor | Physics | 36 | Expired |
| US6022766A | Semiconductor structure incorporating thin film transistors, and methods for its manufacture | Electricity | 35 | Expired |
| US5185294A | Boron out-diffused surface strap process | Electricity | 32 | Expired |
| US6660596B2 | Double planar gated SOI MOSFET structure | Electricity | 28 | Expired |
| US4799990A | Method of self-aligning a trench isolation structure to an implanted well region | Electricity | 27 | Expired |
| US6339005B1 | Disposable spacer for symmetric and asymmetric Schottky contact to SOI MOSFET | Electricity | 23 | Expired |
| US7652313B2 | Deep trench contact and isolation of buried photodetectors | Electricity | 15 | Expired |
| US6140171A | FET device containing a conducting sidewall spacer for local interconnect and method for its fabrication | Emerging Cross-Sectional Technologies | 14 | Expired |
| US6436744B1 | Method and structure for creating high density buried contact for use with SOI processes for high performance logic | Electricity | 12 | Expired |
| US6727118B2 | Power distribution design method for stacked flip-chip packages | Electricity | 12 | Expired |
| US7217968B2 | Recessed gate for an image sensor | Electricity | 11 | Expired |
| US6197656A | Method of forming planar isolation and substrate contacts in SIMOX-SOI. | Electricity | 9 | Expired |
| US7183573B2 | Disposable spacer for symmetric and asymmetric Schottky contact to SOI mosfet | Electricity | 8 | Expired |
| US6015745A | Method for semiconductor fabrication | Electricity | 5 | Expired |
| US5894169A | Low-leakage borderless contacts to doped regions | Electricity | 5 | Expired |
| US5605862A | Process for making low-leakage contacts | Electricity | 4 | Expired |
| US7173303B2 | FIN field effect transistor with self-aligned gate | Electricity | 4 | Expired |
| US6335294B1 | Wet cleans for cobalt disilicide processing | Electricity | 3 | Expired |
| US7572701B2 | Recessed gate for a CMOS image sensor | Electricity | 3 | Active |
| US6328794A | Method of controlling stress in a film | Performing Operations; Transporting | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.