Semiconductor sensor anodic-bonding process, wherein bonding of corrugation is prevented
US5545594A · kind A · utility
6Cited by
31References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 26, 1993 |
| Grant date | Aug 13, 1996 |
| Priority date | — |
| Expiry date | Oct 26, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0042
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for bonding a silicon substrate and a glass substrate through an anodic-bonding process, including steps of: forming at least two holes in the glass substrate; forming a recess on the glass substrate, the recess confronting an undesired bonding portion defined in the silicon substrate; depositing a metal layer on the glass substrate with a predetermined pattern; depositing a dielectric layer on the metal layer, the insulating layer covering substantially the entire surface of the metal layer; and bonding the glass substrate and the semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.