Semiconductor device and method of fabricating the same
US5545919A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 1995 |
| Grant date | Aug 13, 1996 |
| Priority date | — |
| Expiry date | Jul 3, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Metal wires are formed side by side over a semiconductor substrate, with an interlayer insulating film interposed between the metal interconnections and the semiconductor substrate. The metal interconnections are covered with a passivation film composed of a lower silicon oxide film and an upper silicon nitride film. The silicon oxide film is deposited so that the maximum thickness of the portions of the silicon oxide film on the side faces of the metal interconnections is less than half of the minimum space between the metal interconnections. The silicon nitride film is deposited so as to be interposed between the portions of the silicon oxide film on the side faces of the adjacent metal interconnections.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.