Semiconductor memory device including reverse and rewrite means
US5546342A · kind A · utility
9Cited by
5References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 13, 1994 |
| Grant date | Aug 13, 1996 |
| Priority date | — |
| Expiry date | Oct 13, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/1006
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The life of a semiconductor memory device can be prolonged by using a plurality of memory cells and decreasing the stress applied to the dielectric film of the memory cells storing a data value "1." This is achieved in the present invention by decreasing the number of rewritings required to retain stored data. Specifically, the present invention utilizes a reverse and rewrite means to reverse and rewrite data back into memory cells after being read, memory means for memorizing a signal indicating whether the currently stored data is in a reversed state, and judging means for judging whether the data should be reversely output.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.