Hiroshige Hirano
85Patents
17h-index
42Co-inventors
84Inventor score
Filing activity: Jan 16, 1991 → Mar 14, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6081036A | Semiconductor device | Electricity | 131 | Expired |
| US5179298A | CMOS buffer circuit which is not influenced by bounce noise | Electricity | 128 | Expired |
| US5650742A | Voltage-level shifter | Electricity | 45 | Expired |
| US5375093A | Temperature detecting circuit and dynamic random access memory device | Physics | 39 | Expired |
| US5675530A | Ferroelectric memory device | Physics | 32 | Expired |
| US5828619A | Semiconductor memory device | Physics | 31 | Expired |
| US5523974A | Semiconductor memory device with redundant memory cell backup | Physics | 31 | Expired |
| US5828615A | Reference potential generator and a semiconductor memory device having the same | Physics | 30 | Expired |
| US5751628A | Ferroelectric memory devices and method for testing them | Physics | 30 | Expired |
| US5515312A | Semiconductor memory device | Physics | 29 | Expired |
| US5163168A | Pulse signal generator and redundancy selection signal generator | Physics | 27 | Expired |
| US5392234A | Semiconductor memory device | Physics | 26 | Expired |
| US6118688A | Ferroelectric memory device and method for driving it | Physics | 24 | Expired |
| US5864247A | Voltage detection circuit, power-on/off reset circuit, and semiconductor device | Physics | 20 | Expired |
| US6157563A | Ferroelectric memory system and method of driving the same | Physics | 19 | Expired |
| US5969979A | Ferroelectric memory device | Physics | 19 | Expired |
| US5430671A | Semiconductor memory device | Physics | 19 | Expired |
| US6067265A | Reference potential generator and a semiconductor memory device having the same | Physics | 14 | Expired |
| US6912149B2 | Ferroelectric memory device and method for reading data from the same | Physics | 14 | Expired |
| US5898608A | Method for operating a ferroelectric memory | Physics | 12 | Expired |
| US6353550B1 | Ferroelectric memory device | Physics | 10 | Expired |
| US5546342A | Semiconductor memory device including reverse and rewrite means | Physics | 9 | Expired |
| US7696607B2 | Semiconductor device | Electricity | 9 | Active |
| US5694445A | Semiconductor device with means for charge recycling | Electricity | 9 | Expired |
| US5740114A | Redundant memory cell selecting circuit having fuses coupled to memory cell group address and memory cell block address | Physics | 8 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.