Method and apparatus for conditioning a semiconductor polishing pad
US5547417A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 1994 |
| Grant date | Aug 20, 1996 |
| Priority date | — |
| Expiry date | Mar 21, 2014 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B53/017
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of polishing a thin film formed on a semiconductor substrate. In a method of the present invention a polishing pad is rotated. A substrate is pressed against the rotating polishing pad so that the thin film to be polished is placed in direct contact with the polishing pad. During polishing, the polishing pad is continually conditioned by forming a plurality of grooves into the polishing pad. The grooves are formed by a conditioning block having a substantially planar bottom surface with a plurality of groove generating points extending from the substantially planar surface of the conditioning block. The grooves are generated by sweeping and rotating the conditioning block between an outer radius and an inner radius of the polishing pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.