Chemical vapor deposition method for forming a deposited film with the use of liquid raw material
US5547708A · kind A · utility
7Cited by
17References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 14, 1994 |
| Grant date | Aug 20, 1996 |
| Priority date | — |
| Expiry date | Nov 14, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4486
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical vapor deposition method for forming a deposited film on a substrate using a film-forming liquid raw material. The film-forming liquid is pulverized into liquid fine particles which are heated together with a gas to produce a film-forming raw material gas. The film-forming raw material gas is introduced into a reaction chamber where it chemically reacts with a surface of a substrate which is present in the reaction chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.