Process for forming stacked contacts and metal contacts on static random access memory having thin film transistors
US5547892A · kind A · utility
24Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 1995 |
| Grant date | Aug 20, 1996 |
| Priority date | — |
| Expiry date | Apr 27, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/02
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a novel plug structure for low resistance ohmic stacked contacts and at the same time forming metal contacts to devices on a SRAM cell was achieved. The method involved forming electrically conductive plugs in the stacked contact openings to form ohmic connections between a P+ doped polysilicon layer and a N+ doped polysilicon layer and thereby increasing the on current (I.sub.on) of the SRAM cell. The electrical conductive plugs are also simultaneously formed in metal contact openings to devices areas elsewhere on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.