Photo-assisted nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine
US5547897A · kind A · utility
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3References
3Claims
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Key dates
| Filing date | Jun 15, 1994 |
| Grant date | Aug 20, 1996 |
| Priority date | — |
| Expiry date | Jun 15, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/064
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The concentration of N acceptors in an as-grown epitaxial layer of a II-VI semiconductor compound is enhanced by the use of tertiary butyl amine as the dopant carrier, and is further enhanced by the use of photo-assisted growth using illumination whose wavelength is within the range of 200-250 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.