High-Speed, low-noise millimeterwave hemt and pseudomorphic hemt
US5548140A · kind A · utility
24Cited by
6References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 6, 1995 |
| Grant date | Aug 20, 1996 |
| Priority date | — |
| Expiry date | Jun 6, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/852
Abstract
An epitaxial structure and method of manufacture for a field-effect transistor capable of high-speed low-noise microwave, submillimeterwave and millimeterwave applications. Preferably, the epitaxial structure includes a donor layer and/or buffer layer made from a semiconductor material having the formula AlP.sub.0.39+y Sb.sub.0.61-y.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.