Takyiu Liu
8Patents
6h-index
5Co-inventors
45Inventor score
Filing activity: Dec 1, 1994 → Jun 27, 1996
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5663583A | Low-noise and power ALGaPSb/GaInAs HEMTs and pseudomorpohic HEMTs on GaAs substrate | Electricity | 127 | Expired |
| US5548140A | High-Speed, low-noise millimeterwave hemt and pseudomorphic hemt | Electricity | 24 | Expired |
| US5606185A | Parabolically graded base-collector double heterojunction bipolar transistor | Electricity | 22 | Expired |
| US5753545A | Effective constant doping in a graded compositional alloy | Electricity | 10 | Expired |
| US5721161A | Method of making high-speed, low-noise millimeterwave HEMT and pseudormorphic HEMT | Electricity | 8 | Expired |
| US5603765A | Method of growing high breakdown voltage allnas layers in InP devices by low temperature molecular beam epitaxy | Electricity | 7 | Expired |
| US5612551A | AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications | Emerging Cross-Sectional Technologies | 6 | Expired |
| US5610086A | Method of making an AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications | Emerging Cross-Sectional Technologies | 4 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.