Surface-imaging technique for lithographic processes for device fabrication
US5550007A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 1993 |
| Grant date | Aug 27, 1996 |
| Priority date | — |
| Expiry date | May 28, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/948
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface-imaging technique for lithographic processes is disclosed. The lithographic processes are used to manufacture integrated circuit devices. An image is produced on a resist that is applied onto a substrate. The image is produced by exposing selected regions of the resist material to radiation. The selected exposed regions correspond to the image. The resist is then exposed to a silylating reagent that selectively reacts with either the exposed or the unexposed region of the resist. The silylated resist is then subjected to reactive ion etching, which forms an in situ silicon oxide etch mask over the silylated regions of the resist. The mask so formed provides etching selectivity which provides precise image transfer from the resist into the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.