Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd.sub.3 Ga.sub.5 O.sub.12 source.
US5550089A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 1994 |
| Grant date | Aug 27, 1996 |
| Priority date | — |
| Expiry date | Mar 23, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/028
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An optoelectronic lII-V or II-VI semiconductor device comprises a thin film coating with optical characteristics providing low midgap interface state density. A field effect device for inversion channel applications on III-V semiconductors also comprises a thin dielectric film providing required interface characteristics. The thin film is also applicable to passivation of states on exposed surfaces of electronic III-V devices. The thin film comprises a uniform, homogeneous, dense, stoichiometric gallium oxide (Ga.sub.2 O.sub.3) dielectric thin film, fabricated by electron-beam evaporation of a single crystal, high purity Gd.sub.3 Ga.sub.5 O.sub.12 complex compound on semiconductor substrates kept at temperatures ranging from 40.degree. to 370.degree. C. and at background pressures at or above 1.times.10.sup.-10 Torr.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.