Method of sputtering a silicon nitride film
US5550091A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | May 9, 1995 |
| Grant date | Aug 27, 1996 |
| Priority date | — |
| Expiry date | May 9, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided an electronic device like a TFT using a silicon nitride insulating film of a single layer structure having an excellent dielectric voltage, and a method of producing the electronic device with reliability. In the electronic device, a conductive wiring pattern is deposited on a surface of an electrically insulated substrate, and an insulating layer is formed to cover the wiring pattern and the substrate. The insulating layer is made of a silicon nitride insulating film. A contact angle .theta. between the wiring pattern and the substrate is equals 60.degree. or more, and a value Tn1/Tg of a thickness Tn1 of the silicon nitride insulating film and a thickness Tg of the wiring pattern equals 2 or more. A horizontal distance Tn2 between a rise start position, where the silicon nitride film rises because of a step of the wiring pattern and the top end of the wiring pattern, and Tn1 are in a relation where 0.6.ltoreq.Tn2/Tn1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.