Power MOSFET with overcurrent and over-temperature protection and control circuit decoupled from body diode
US5550701A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 1994 |
| Grant date | Aug 27, 1996 |
| Priority date | — |
| Expiry date | Aug 30, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2017/0806
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An NPN transistor is added to the chip of a power integrated circuit which contains a power MOSFET and a control circuit in a common chip. The NPN transistor is coupled between the P well containing the integrated circuit components and the N type substrate of the chip and is turned on in response to the forward biasing of the body diode Of the power MOSFET. A depletion mode control MOSFET transistor is coupled, through a fault latch circuit, to the power MOSFET gate and is in series with a capacitor. The node between the power MOSFET gate and capacitor is decoupled from the N type substrate when the bipolar transistor turns on, to turn off the power MOSFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.