Nonvolatile memory cell formed using self aligned source implant
US5553018A · kind A · utility
84Cited by
3References
4Claims
0Family size
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Key dates
| Filing date | Jun 7, 1995 |
| Grant date | Sep 3, 1996 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/30
Abstract
A memory device, such as a flash EEPROM, employs a high energy implantation to form common source line, avoiding the necessity of self-aligned source etch processes. The use of the high energy implantation, and avoiding the etching process, provides for greater cell uniformity, and better V.sub.T distribution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.