Magnetron plasma processing system
US5554249A · kind A · utility
22Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 28, 1995 |
| Grant date | Sep 10, 1996 |
| Priority date | — |
| Expiry date | Feb 28, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67196
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A magnetron plasma etching system has a plurality of processing chambers connected to a common transfer chamber. Each processing chamber has a pair of counter electrodes for generating an electric field and a magnet mechanism for generating a magnetic field having an N-S axis crossing the electric field. All magnetic fields are rotated in the same plane. The rotation of the magnetic fields is controlled by a controller. When one of the magnetic fields is rotated, the other magnetic fields are rotated at equal speed such that the directions of N-S axes thereof are parallel and identical to that of the one of the magnetic fields.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.