Integrated circuit having both vertical and horizontal devices and process for making the same
US5554870A · kind A · utility
402Cited by
11References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 2, 1995 |
| Grant date | Sep 10, 1996 |
| Priority date | — |
| Expiry date | Aug 2, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/63
Abstract
An integrated circuit (10) has a vertical device, such as a transistor (71), formed by epitaxial growth from a substrate (12) and a horizontal device, such as a transistor (73, 75) grown epitaxially from the vertical device. In accordance with one embodiment of the invention, all six transistors of an SRAM cell can be formed in single crystal material for improved device characteristics and increased cell density. Utilization of various combinations of vertical and horizontal devices permits a large degree of vertical integration within semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.