Semiconductor device and method of increasing device breakdown voltage of semiconductor device
US5554872A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 1995 |
| Grant date | Sep 10, 1996 |
| Priority date | — |
| Expiry date | Mar 27, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/901
Abstract
In a semiconductor device including a composite substrate formed by bonding first and second semiconductor substrates to each other through an oxide film and an insulator isolation trench formed from a major surface of the first semiconductor substrate to reach the oxide film and to surround an element forming region, when the potential of the second substrate is set at a potential higher than the minimum potential in the element forming region of the first substrate, an breakdown voltage can be increased. In a semiconductor integrated circuit having an element isolation region, a semiconductor device of a perfect dielectric isolation structure having an element forming region having a thickness smaller than that of the element forming region of a P-N junction isolation structure is used to reduce, e.g., a base curvature influence, thereby obtaining a further high breakdown voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.