Semiconductor memory operating with low supply voltage
US5555215A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Oct 5, 1995 |
| Grant date | Sep 10, 1996 |
| Priority date | — |
| Expiry date | Oct 5, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention is intended to operate a semiconductor device at high speed with low voltage. A circuit configuration is used in which the transfer impedance between a common I/O line and a data line is changed depending on whether information is to be read or written. A current/voltage converter is provided which includes a MISFET different in conduction type to a select MISFET. Thus, the speed of reading information is increased. An intermediate voltage generator having high driving capability is provided. Thus, the circuit has sufficient driving capability for an LSI having large load capacitance. A voltage converter is provided which converts a data line supply voltage or word line supply voltage to a higher voltage. Therefore, stabilized signal transmission is ensured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.