Semiconductor laser device
US5555271A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1994 |
| Grant date | Sep 10, 1996 |
| Priority date | — |
| Expiry date | Dec 23, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3218
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
On an n-type GaAs semiconductor substrate, an n-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate, an active layer and a p-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate are formed, and a p-type barrier cladding layer formed of AlGaInP system crystal or AlInP system crystal is provided in the p-type cladding layer. The p-type barrier cladding layer has a thickness through which electrons are almost not transmitted, has tensile strain, and also has band gap energy larger than that of the p-type cladding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.