Semiconductor device having double metal connection layers connected to each other and to the substrate in the scribe line area
US5559362A · kind A · utility
12Cited by
4References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 17, 1994 |
| Grant date | Sep 24, 1996 |
| Priority date | — |
| Expiry date | Oct 17, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device having two metal connection layers formed on a scribe line area, the metal connection layers are connected to each other and further to a semiconductor substrate. The two metal connection layers are connected to each other via contact holes arranged along the scribe line area. This enhances heat dissipation and heat conductivity to allow heat to be rapidly transferred to the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.