Diamond-like carbon for use in VLSI and ULSI interconnect systems
US5559367A · kind A · utility
132Cited by
12References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 12, 1994 |
| Grant date | Sep 24, 1996 |
| Priority date | — |
| Expiry date | Jul 12, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to semiconductor devices comprising as one of their structural components diamond-like carbon as an insulator for spacing apart one or more levels of a conductor on an integrated circuit chip. The present invention also relates to a method for forming an integrated structure and to the integrated structure produced therefrom. The present invention further provides a method for selectively ion etching a diamond-like carbon layer from a substrate containing such a layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.