Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation
US5559368A · kind A · utility
261Cited by
1References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 1994 |
| Grant date | Sep 24, 1996 |
| Priority date | — |
| Expiry date | Aug 30, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/721
Abstract
A dynamic threshold voltage IGFET such as a MOSFET is operable at voltages of 0.6 volt or less. The threshold voltage of the transistor is reduced to zero volt or less by interconnecting the gate contact and the device body in which the voltage controlled channel is located. Several efficient connections using through hole plating or polycrystalline silicon gate extension are disclosed. A higher power supply voltage can be used by interconnecting the gate and device body through a smaller MOSFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.