Memory with ferroelectric capacitor connectable to transistor gate
US5559733A · kind A · utility
52Cited by
11References
4Claims
0Family size
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Key dates
| Filing date | Jun 7, 1995 |
| Grant date | Sep 24, 1996 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/223
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A ferroelectric memory includes a constant voltage source, a capacitor having first and second electrodes, and a transistor having a gate. A switch alternately connects the gate of the transistor to the first electrode and the constant voltage source. In another embodiment, there are two ferroelectric transistors, and the first electrode of each capacitor is connected both to the gate of the transistor and to a voltage source external of the memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.