Semiconductor laser device
US5559818A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 1994 |
| Grant date | Sep 24, 1996 |
| Priority date | — |
| Expiry date | Sep 27, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34326
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention is directed to a semiconductor laser device in which an active layer is constituted by a quantum well layer having a structure in which well layers and barrier layers which are formed on a GaAs substrate are alternately layered, cladding layers are provided so as to interpose the active layer, the value of a strain on each of the well layers is -0.8% to -1.5%, the thickness of a well layer is from 80 .ANG. to 180 .ANG., the value of strain on each of the barrier layers is +0.5% to +1.0%, the thickness of the barrier layer is 20 .ANG. to 60 .ANG., and the respective numbers of layered well layers and barrier layers are 2 to 4.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.