Patent · US Expired

Plasma downstream processing

US5562775A · kind A · utility

3Cited by
6References
8Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJul 5, 1995
Grant dateOct 8, 1996
Priority date
Expiry dateJul 5, 2015

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/32357
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

An apparatus for performing plasma downstream processing comprises: a microwave introduction chamber defined by a wall having a microwave transmitting window formed of a microwave transmissive material at a part thereof; a plasma generating chamber facing to said microwave introduction chamber through said microwave transmitting window and having a conductive microwave shield disposed generally parallel to said microwave transmitting window, to define a plasma generating space, said microwave shield including a central member which is formed of a continuous conductor and an outer member disposed outside the central member through a gap which has a folded cross sectional shape in a plane including a central normal to the microwave transmitting window; and an evacuatable processing chamber disposed adjacent to said plasma generating chamber through said microwave shield. The gap formed between the central member and the outer member can have a large cross section compared to the conventional through holes in the punching metal. Folded configuration of the gap can prevent direct passing-through of charged particles through microwave shield. A reliable and fast ashing process can be re…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.