Method of etching an oxide layer
US5562801A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 7, 1994 |
| Grant date | Oct 8, 1996 |
| Priority date | — |
| Expiry date | Dec 7, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76897
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching an oxide layer is disclosed. First, a resist layer is formed on an oxide layer on a substrate. Next, a photosensitive layer is formed on the oxide layer and patterned to expose regions of the oxide layer to be removed. The exposed regions may overlie a nitride layer, and may overlie a structure such as a polysilicon gate. The etch is performed such that polymer deposits on the photosensitive layer, thus eliminating interactions between the photosensitive layer and the plasma. In this way, a simple etch process allows for good control of the etch, resulting in reduced aspect ratio dependent etch effects, high oxide:nitride selectivity, and good wall angle profile control.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.