Buried reverse bias junction configurations in semiconductor structures employing photo induced evaporation enhancement during in situ epitaxial growth and device structures utilizing the same
US5563094A · kind A · utility
7Cited by
13References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 6, 1990 |
| Grant date | Oct 8, 1996 |
| Priority date | — |
| Expiry date | Sep 6, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In situ removal of selected or patterned portions of semiconductor layers is accomplished by induced evaporation enhancement to form reversed bias current confinement structures in semiconductor devices, such as heterostructure lasers and array lasers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.