Ohmic contact structure of a highly integrated semiconductor device having two resistance control layers formed between a metal electrode and the substrate
US5563448A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 1994 |
| Grant date | Oct 8, 1996 |
| Priority date | — |
| Expiry date | Mar 2, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An ohmic contact structure for connection of a metal electrode to a highly integrated semiconductor device and a method for making the same. A contact hole is selectively formed in an insulating layer. A contact structure of a hetero-junction of Ge and Si.sub.1-x Ge.sub.x whose bandgap is lower than that of the underlying substrate material is formed between the interface of the metal electrode and the semiconductor substrate. The hetero-junction structure minimizes stress and strain between the metal electrode and the semiconductor substrate. The ohmic contact structure lowers the resistance of electronic lines and increases the reliability of integrated semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.