Soonoh Park
8Patents
5h-index
22Co-inventors
63Inventor score
Filing activity: Mar 2, 1994 → Jul 14, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5563448A | Ohmic contact structure of a highly integrated semiconductor device having two resistance control layers formed between a metal electrode and the substrate | Electricity | 42 | Expired |
| US9184376B2 | Memory devices and methods of manufacturing the same | Electricity | 14 | Active |
| US8278206B2 | Variable resistance memory device and methods of forming the same | Physics | 10 | Active |
| US9570670B2 | Magnetic device and method of fabricating the same | Electricity | 7 | Active |
| US8501623B2 | Method of forming a semiconductor device having a metal silicide and alloy layers as electrode | Electricity | 5 | Active |
| US8558348B2 | Variable resistance memory device and methods of forming the same | Physics | 4 | Active |
| US9583697B2 | Magnetic memory devices and methods of forming the same | Electricity | 4 | Active |
| US9893271B2 | Semiconductor memory device | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.