Process for plasma enhanced anneal of titanium nitride
US5567483A · kind A · utility
39Cited by
14References
9Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jun 5, 1995 |
| Grant date | Oct 22, 1996 |
| Priority date | — |
| Expiry date | Jun 5, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A titanium nitride film is annealed at a temperature less than 500.degree. C. by subjecting said titanium nitride film to an RF created plasma generated from a nitrogen-containing gas in a rotating susceptor reactor. The formed film is comparable to a thin film annealed at significantly higher temperatures, making this process useful for integrated circuits containing aluminum elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.