Method of forming tapered plug-filled via in electrical interconnection
US5567650A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 1994 |
| Grant date | Oct 22, 1996 |
| Priority date | — |
| Expiry date | Dec 15, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for contouring a via formed in a dielectrics whereby a layer of a refractory metal is formed on the dielectric and in the via. The refractory metal layer is removed until a surface of the refractory metal within the via is below the upper surface of the dielectric. An etching process removes a portion of the dielectric and a tapered shape is formed at the intersection of the via and the upper surface of the dielectric. A second layer of metal is formed over the dielectric, with the second layer of metal extending into the vias and contacting the refractory metal with the tapered shape providing improved step coverage of the second layer of metal at the via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.