Capacitor dielectrics of silicon-doped amorphous hydrogenated carbon
US5569487A · kind A · utility
8Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 23, 1995 |
| Grant date | Oct 29, 1996 |
| Priority date | — |
| Expiry date | Jan 23, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/14
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Capacitors with high dielectric strength and low dissipation factor over a wide range of frequencies comprise two or more conductive layers separated by at least one dielectric layer. The dielectric layer is of silicon-doped amorphous hydrogenated carbon, with suitable dopants including silane (which is preferred), tetraalkoxysilanes and polyorganosiloxanes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.