Method for reforming insulating film
US5569499A · kind A · utility
6Cited by
11References
10Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Oct 31, 1994 |
| Grant date | Oct 29, 1996 |
| Priority date | — |
| Expiry date | Oct 31, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76801
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for reforming an insulating film such as a BSG film formed by a CVD technique. The method reduces the parasitic capacitance between conductor layers having an intervening film, especially a BSG film, and includes the steps of depositing a BSG film on a substrate from a gaseous source and exposing the BSG film to a reforming gas plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.