Method of forming metal pattern including a schottky diode
US5569614A · kind A · utility
21Cited by
10References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 5, 1995 |
| Grant date | Oct 29, 1996 |
| Priority date | — |
| Expiry date | May 5, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.