Method for forming a capacitor of a semiconductor memory cell
US5569619A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 28, 1995 |
| Grant date | Oct 29, 1996 |
| Priority date | — |
| Expiry date | Feb 28, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
Abstract
A method for forming a capacitor of a memory cell is disclosed. Steps of the present invention may include: forming a first conductive layer on a substrate; forming a tantalum oxide layer on the first conductive layer; forming a silicon nitride layer on the tantalum oxide layer; carrying out a titanium ion implantation into the tantalum oxide layer; carrying out a heat treatment, which may form a silicon oxide layer between the first conductive layer and the tantalum oxide layer, and which may include titanium oxide in the tantalum oxide layer, and which may change the silicon nitride to an oxynitride layer; and forming a second conductive layer on the oxynitride layer. During the titanium ion implantation process, Ti(OCH.sub.3).sub.4 may be used as a titanium ion source. The titanium ion implantation process may be carried out using the Si.sub.3 N.sub.4 layer as a buffer layer, and with an energy of about 5 KeV-15 KeV, and a dosage of about 10.sup.13 -10.sup.16.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.